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STH110N10F7-2

Part No STH110N10F7-2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N CH 100V 110A H2PAK / High avalanche ruggedness
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.5mOhm at 55A, 10V
Vgs(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 72nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5117pF at 50V
Power Dissipation (Maximum) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package H2Pak-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number Series STH110
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814142-STH110N10F7-2
Ultra Librarian 3D Model Ultra Librarian STH110N10F7-2 CAD Model

Description

STH110N10F7-2 - N-channel 100V - 0.0045 Ohm - 180A - TO-247 - STripFET™ VII DeepGATE™ Power MOSFET

The STH110N10F7-2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, renowned for its excellence in semiconductor technology. This Power MOSFET is a part of the STripFET™ VII DeepGATE™ series, which is designed to provide superior power efficiency and density while maintaining a low on-resistance and high switching performance.

With a voltage rating of 100V, the STH110N10F7-2 is well-suited for a wide range of applications, including high-efficiency power supplies, DC-DC converters, motor control, and automotive systems. Its low on-resistance of just 0.0045 Ohm minimizes conduction losses, making it an ideal choice for high-current applications with a continuous current rating of up to 180A.

The device is housed in a TO-247 package, known for its robustness and high thermal performance, which ensures reliability and longevity even in demanding environments. This package also allows for better heat dissipation, providing a thermal resistance that helps maintain performance under high operating temperatures.

Key features of the STH110N10F7-2 include:

  • 100V drain-source voltage (VDS)
  • Ultra-low on-resistance (RDS(on)) of 0.0045 Ohm
  • High continuous drain current (ID) of 180A
  • Low gate charge (Qg) for faster switching
  • TO-247 package for enhanced thermal management
  • 100% avalanche tested for guaranteed reliability

The MOSFET's advanced STripFET™ VII DeepGATE™ technology is engineered to deliver high switching speeds, which is essential for improving efficiency in power conversion applications. Additionally, the device is 100% avalanche tested, ensuring ruggedness and reliability in the field.

Whether you're designing for power management in computing, industrial applications, or automotive electronics, the STH110N10F7-2 offers a combination of high efficiency, reliability, and performance. STMicroelectronics' commitment to innovation is evident in this component, making it a go-to solution for engineers seeking to optimize their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2757 $59.1682
62+ $1.8672 $115.7664
96+ $1.8089 $173.6544
132+ $1.7505 $231.0660
171+ $1.6922 $289.3662
229+ $1.5171 $347.4159
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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