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STP11NM60

Part No STP11NM60
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET | MOSFET N-CH 650V 11A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1000pF at 25V
Power Dissipation (Maximum) 160W
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261661-STP11NM60
Manufacturer Homepage www.st.com
Family Name STP11NM60
Introduction Date May 17, 2000
ECCN EAR99
Country of Origin Morocco
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP11NM60 CAD Model

Description

STP11NM60 - N-Channel MOSFET by STMicroelectronics

The STP11NM60 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is a part of STMicroelectronics' MDmesh™ series, which is known for its excellent on-state resistance and switching performance, making it suitable for high-efficiency power supplies and converters.

Key Features

  • Voltage Rating: The STP11NM60 operates at a drain-source voltage (VDS) of 600V, which allows it to handle high voltage applications with ease.
  • Current Capacity: It has a continuous drain current (ID) of 11A, providing ample current handling capability for a variety of electronic circuits.
  • Low On-Resistance: With an on-state resistance (RDS(on)) of just 0.38 ohms, the STP11NM60 ensures minimal power loss and higher efficiency in operation.
  • Fast Switching: The device features fast switching speed, which is essential for reducing switching losses and improving the performance of power conversion systems.
  • High dv/dt Capability: Its robust design allows it to withstand high voltage transients, ensuring reliability in harsh environments.
  • Enhanced Body Diode: The MOSFET comes with an intrinsic fast-recovery body diode, which is beneficial for hard-switching applications and provides additional protection against reverse current.

Applications

The STP11NM60 is well-suited for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC/DC converters
  • Motor control circuits
  • Power management solutions
  • LED lighting systems
  • Uninterruptible Power Supplies (UPS)

Quality and Reliability

STMicroelectronics is committed to providing high-quality products. The STP11NM60 is built to meet the stringent standards of the semiconductor industry, ensuring long-term reliability for your electronic projects. With its robust construction and well-engineered design, the STP11NM60 is an excellent choice for designers looking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7413 $52.2390
70+ $1.4288 $100.0160
110+ $1.3841 $152.2510
150+ $1.3395 $200.9250
195+ $1.2948 $252.4860
260+ $1.1609 $301.8340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 290 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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