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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series H
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Power - Max 115 W
Switching Energy 136µJ (on), 207µJ (off)
Input Type Standard
Gate Charge 81 nC
Td (on/off) @ 25°C 24.5ns/118ns
Test Condition 400V, 15A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Base Product Number STGWT15
Other Names 497-17620
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277373-STGWT15H60F
Ultra Librarian 3D Model Ultra Librarian STGWT15H60F CAD Model

Description

STGWT15H60F - 600 V, 15 A Trench Gate Field-Stop IGBT

The STGWT15H60F from STMicroelectronics is a high-performance 600 V, 15 A trench gate field-stop IGBT designed to offer an optimal balance between switching performance and on-state behavior, making it suitable for a wide range of high-efficiency applications. This IGBT utilizes advanced trench gate field-stop technology to achieve low on-state voltage drop (V<sub>CE(sat)) with a positive temperature coefficient, which facilitates easier parallel operation.

With a maximum collector current of 15 A and collector-emitter voltage of 600 V, the STGWT15H60F is capable of handling significant power levels. The device features a low gate charge (Q<sub>g), which enhances its switching performance, thus reducing switching losses and enabling high-frequency operation. This characteristic, combined with the fast recovery diode, makes the STGWT15H60F an excellent choice for resonant or hard-switching topologies.

The robustness of the STGWT15H60F is further exemplified by its high short-circuit withstand time rating, which provides an additional layer of protection against unexpected transient conditions. This ensures reliability and longevity in applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

Designed for efficiency, the STGWT15H60F is also characterized by its minimized tail current and low thermal resistance, which contribute to reduced thermal management requirements. The co-packaged fast recovery anti-parallel diode also minimizes the need for additional components, thereby simplifying design and reducing overall system cost.

STMicroelectronics packages the STGWT15H60F in a TO-247 long leads package, which is known for its excellent thermal and electrical performance. The package is designed to provide good heat dissipation and ease of mounting on heat sinks, ensuring stable operation even under high power and temperature conditions.

In summary, the STGWT15H60F is a state-of-the-art IGBT that offers a combination of high efficiency, fast switching, and robustness, making it an ideal choice for designers looking to optimize their power conversion systems.

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