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STL18N65M2

Part No STL18N65M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Zener-protected | MOSFET N-CH 650V 8A POWERFLAT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 365mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 21.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 764pF at 100V
Power Dissipation (Maximum) 57W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package PowerFlat (5x6) HV
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261316-STL18N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STL18N65M2 CAD Model

Description

STL18N65M2 - N-channel 650 V, 0.18 Ohm typ., 16 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 package

Introducing the STL18N65M2, a cutting-edge N-channel Power MOSFET from the renowned semiconductor manufacturer, STMicroelectronics. This high-performance MOSFET is a part of the MDmesh™ M2 series, which is well-known for its excellent energy efficiency and reduced power losses. The STL18N65M2 is specifically designed to address the demanding requirements of high-efficiency power conversion applications.

The device boasts an impressive 650 V breakdown voltage, making it suitable for high-voltage operations. With a low on-resistance of just 0.18 Ohm (typical), the STL18N65M2 ensures minimal conduction losses, enhancing overall system efficiency. The MOSFET can handle a continuous drain current of up to 16 A, providing robust performance for a wide range of applications.

One of the key features of the STL18N65M2 is its PowerFLAT™ 5x6 package, which not only offers a compact footprint but also excellent thermal performance. This package design allows for a high level of power density, making it ideal for space-constrained applications while ensuring reliable operation even under high thermal conditions.

The STL18N65M2 utilizes STMicroelectronics' innovative second-generation MDmesh™ technology. This technology incorporates a unique vertical structure, which optimizes the device's on-resistance and dynamic performance. As a result, the MOSFET exhibits reduced switching losses, making it highly suitable for high-frequency power switching applications such as Switch Mode Power Supplies (SMPS), LED lighting, and high-efficiency converters.

With its robust design and advanced technology, the STL18N65M2 is a perfect choice for engineers looking to improve the efficiency and reliability of their power management systems. Whether you are working on renewable energy inverters, welding equipment, or any other power-intensive application, the STL18N65M2 provides the performance and durability you need to succeed.

STMicroelectronics' commitment to quality and innovation is evident in the STL18N65M2, making it a smart choice for your next project that requires high voltage, high efficiency, and compact size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3507 $54.0280
95+ $1.1083 $105.2885
140+ $1.0736 $150.3040
195+ $1.0390 $202.6050
250+ $1.0044 $251.1000
335+ $0.9005 $301.6675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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