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STL12N3LLH5

Part No STL12N3LLH5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Low gate drive power losses | MOSFET N-CH 30V 12A POWERFLAT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 9mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 4.5V
Gate Source Voltage (Maximum) ±22V
Input Capacitance (Ciss) (Maximum) at Vds 1500pF at 25V
Power Dissipation (Maximum) 2W, 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerFlat (3.3x3.3)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261306-STL12N3LLH5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STL12N3LLH5 CAD Model

Description

STL12N3LLH5 - N-Channel MOSFET by STMicroelectronics

The STL12N3LLH5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, which is a leading name in semiconductor solutions. This MOSFET is designed to deliver efficiency and power handling capabilities suitable for a broad range of applications, including but not limited to, power management, automotive, and industrial systems.

With a drain-source voltage (VDS) of 30V, the STL12N3LLH5 is capable of handling moderate voltage levels while providing a low on-resistance (RDS(on)) of just 7.3 mΩ max. This low on-resistance is crucial for applications that require high efficiency as it minimizes the power loss due to the MOSFET's internal resistance when it is turned on. The STL12N3LLH5 can support a continuous drain current (ID) of up to 30A, making it suitable for high current applications.

The device comes in a compact and robust PowerFLAT 5x6 package, which not only saves space on the PCB but also provides excellent thermal performance. Its small footprint and low profile make it an ideal choice for space-constrained applications. Furthermore, the STL12N3LLH5 is 100% avalanche tested, ensuring reliability and robustness in harsh environments.

STMicroelectronics has designed the STL12N3LLH5 with the latest trench gate field-stop technology, which significantly reduces the gate charge (Qg) and improves the overall switching performance of the device. This technology allows for faster switching speeds, which is beneficial for applications requiring high-frequency operation.

Moreover, the STL12N3LLH5 features a low gate threshold voltage (VGS(th)), which makes it compatible with low-voltage drive signals and reduces the power required to switch the device. This characteristic is particularly important for battery-powered applications where power conservation is critical.

In summary, the STL12N3LLH5 by STMicroelectronics is a versatile and efficient N-channel Power MOSFET that offers low on-resistance, high current capability, and fast switching speeds in a compact package. Its robustness and reliability make it a preferred choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8731 $61.1170
165+ $0.7165 $118.2225
250+ $0.6941 $173.5250
345+ $0.6717 $231.7365
445+ $0.6493 $288.9385
600+ $0.5821 $349.2600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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