The FQPF6N90 from ON Semiconductor is a robust and high-performance 900V N-channel QFET® MOSFET designed for a wide range of applications. This power MOSFET is engineered to deliver high efficiency and reliability in high-voltage switching applications. It is an ideal choice for designers looking for a device with low on-resistance and high blocking voltage capabilities.

Key Features:

• Voltage: The device boasts a high drain-source voltage (V<sub>DS) of 900V, making it suitable for various high voltage applications.
• Current: It can handle continuous drain current (I<sub>D) of up to 6A, providing substantial current handling capability.
• Low On-Resistance: With a low on-state resistance (R<sub>DS(on)), this MOSFET ensures minimal power loss and improved efficiency.
• High-Speed Switching: The FQPF6N90 is designed for high-speed switching applications, offering improved performance for power supplies and converters.
• Thermal Performance: Excellent thermal performance is achieved through a robust package design, ensuring reliability even under high temperature operating conditions.
• QFET® Technology: Utilizes ON Semiconductor's proprietary QFET® technology that enhances device performance and longevity.

Applications:

The versatility of the FQPF6N90 allows it to be used in various applications, including but not limited to:

• Switch Mode Power Supplies (SMPS)
• Power Inverter Systems
• Power Factor Correction (PFC) circuits
• Electronic Lamp Ballasts
• Industrial and Consumer Converter Circuits

Quality and Reliability:

ON Semiconductor is committed to delivering high-quality products. The FQPF6N90 is designed and tested to meet stringent quality standards, ensuring reliable performance for critical applications. With its superior electrical characteristics and thermal performance, this MOSFET is a top choice for engineers and designers seeking components that will provide a long operational lifespan and consistent performance.