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STI24NM60N

Part No STI24NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1400pF @ 50V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 190 mOhm @ 8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1261093-STI24NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STI24NM60N
Introduction Date January 05, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian STI24NM60N CAD Model

Description

The STI24NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh™ II Plus™ technology. This device is designed for a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-efficiency converters. It is particularly well-suited for high-power applications where energy efficiency is a critical factor.

The MOSFET operates at a drain-source voltage of 600 V, which enables it to handle high voltage levels with ease. It boasts an impressively low on-resistance of just 0.190 ohms typical, which contributes to reduced conduction losses and enhances overall system efficiency. With a continuous drain current of 17 A, the STI24NM60N can manage significant power without overheating or failing.

One of the standout features of this device is its low gate charge (Qg), which improves the switching performance. This results in faster turn-on and turn-off times, minimizing switching losses and making the MOSFET ideal for high-frequency applications. The low input capacitance and gate charge also make the device easier to drive, which can lead to reduced driver power consumption and simpler gate drive circuits.

The STI24NM60N is housed in a TO-220 package, which is known for its robustness and excellent thermal performance. The package is designed to provide good heat dissipation, ensuring that the device remains cool even under high power operation. This enhances the reliability and longevity of the MOSFET.

STMicroelectronics has integrated multiple protection features into the STI24NM60N, including a 100% avalanche tested design, which ensures the device can withstand harsh operating conditions. This makes it a reliable choice for designers looking to create durable and efficient power conversion systems.

Overall, the STI24NM60N is a testament to STMicroelectronics' commitment to providing advanced power solutions that meet the needs of modern electronic systems. Its combination of high voltage capability, low on-resistance, fast switching, and thermal efficiency makes it a top choice for engineers and designers across various industries.

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