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STH245N75F3-6

Part No STH245N75F3-6
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Low profile, very low parasitic inductance | MOSFET N-CH 75V 180A H2PAK-6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 180A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3mOhm at 90A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 87nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6800pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package H2PAK-6
Manufacturer Package TO-263-7, D2Pak (6 Leads + Tab)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261072-STH245N75F3-6
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STH245N75F3-6 CAD Model

Description

STH245N75F3-6 Power MOSFET by STMicroelectronics

The STH245N75F3-6 is a cutting-edge power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its commitment to delivering state-of-the-art electronic components. This particular product is part of the STripFET F3 series, which is renowned for its low on-resistance and minimal gate charge, making it a highly efficient choice for power management applications.

The STH245N75F3-6 is designed to handle high current and voltage with ease, boasting a robust maximum VDS of 75V and a substantial continuous drain current (ID) of 120A at 25°C. This makes it an ideal component for a wide range of demanding applications, including but not limited to, switch-mode power supplies (SMPS), high-efficiency DC-DC converters, motor control systems, and automotive applications, where reliability and efficiency are paramount.

With an RDS(on) value as low as 0.0035 ohms, this MOSFET ensures minimal power loss during operation, which translates to improved overall system efficiency. The STH245N75F3-6 also features a low gate charge (Qg), which enhances its switching performance, further contributing to the energy efficiency of the applications it is employed in.

Encased in a robust and compact TO-247 package, the STH245N75F3-6 is designed for easy integration into various circuit designs. Its package is engineered to handle high thermal loads, ensuring that the device operates reliably even under high temperature conditions, which is critical for maintaining performance and longevity in power-intensive applications.

STMicroelectronics has also taken steps to ensure that the STH245N75F3-6 meets the stringent environmental standards of today. It is compliant with RoHS and Halogen-free requirements, reflecting the company's commitment to environmental sustainability without compromising on performance.

Overall, the STH245N75F3-6 from STMicroelectronics is a testament to the company's dedication to innovation and quality in the field of power electronics. Its superior electrical characteristics, efficiency, and robustness make it a top choice for engineers and designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4498 $58.7952
58+ $2.0097 $116.5626
89+ $1.9473 $173.3097
123+ $1.8838 $231.7074
159+ $1.8214 $289.6026
213+ $1.6332 $347.8716
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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