STH185N10F3-2 - High-Performance N-Channel MOSFET

The STH185N10F3-2 is a state-of-the-art N-channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver high efficiency and performance in a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control, and general-purpose switching.

With a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 180A, the STH185N10F3-2 is capable of handling high power density and current requirements with ease. The device features an extremely low on-resistance (R_DS(on)) of only 2.9 mΩ max, which significantly reduces conduction losses and improves overall system efficiency.

The STH185N10F3-2 is part of STMicroelectronics' STripFET™ F3 series, which utilizes the latest generation of trench gate structure technology to optimize R_DS(on) versus gate charge (Q_g). This balance ensures that the MOSFET can provide excellent switching performance, making it an ideal choice for high-frequency applications.

This MOSFET is housed in a robust and compact H2PAK-2 package, designed for improved thermal performance and reduced footprint on the PCB. The package is optimized for easy mounting and is compatible with standard surface-mount processes, offering designers flexibility and reliability in their circuit layouts.

Safety and reliability are paramount for STMicroelectronics. The STH185N10F3-2 incorporates features such as avalanche ruggedness and 100% avalanche tested, ensuring that it can withstand tough conditions and provide a long operational life. Additionally, the device is compliant with the RoHS directive, which means it is free from hazardous substances, making it an environmentally friendly choice for your electronic designs.

Whether you're designing power management systems, high-performance computing, or automotive applications, the STH185N10F3-2 from STMicroelectronics offers the performance, efficiency, and reliability that your projects demand.