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Manufacturer STMicroelectronics
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.5mOhm at 60A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 114.6nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6665pF at 25V
Power Dissipation (Maximum) 315W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package H2Pak-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number Series STH185
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806958-STH185N10F3-2
Ultra Librarian 3D Model Ultra Librarian STH185N10F3-2 CAD Model

Description

STH185N10F3-2 - High-Performance N-Channel MOSFET

The STH185N10F3-2 is a state-of-the-art N-channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver high efficiency and performance in a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control, and general-purpose switching.

With a drain-source voltage (V<sub>DS) of 100V and a continuous drain current (I<sub>D) of 180A, the STH185N10F3-2 is capable of handling high power density and current requirements with ease. The device features an extremely low on-resistance (R<sub>DS(on)) of only 2.9 mΩ max, which significantly reduces conduction losses and improves overall system efficiency.

The STH185N10F3-2 is part of STMicroelectronics' STripFET™ F3 series, which utilizes the latest generation of trench gate structure technology to optimize R<sub>DS(on) versus gate charge (Q<sub>g). This balance ensures that the MOSFET can provide excellent switching performance, making it an ideal choice for high-frequency applications.

This MOSFET is housed in a robust and compact H2PAK-2 package, designed for improved thermal performance and reduced footprint on the PCB. The package is optimized for easy mounting and is compatible with standard surface-mount processes, offering designers flexibility and reliability in their circuit layouts.

Safety and reliability are paramount for STMicroelectronics. The STH185N10F3-2 incorporates features such as avalanche ruggedness and 100% avalanche tested, ensuring that it can withstand tough conditions and provide a long operational life. Additionally, the device is compliant with the RoHS directive, which means it is free from hazardous substances, making it an environmentally friendly choice for your electronic designs.

Whether you're designing power management systems, high-performance computing, or automotive applications, the STH185N10F3-2 from STMicroelectronics offers the performance, efficiency, and reliability that your projects demand.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.7964 $67.1496
33+ $3.9356 $129.8748
51+ $3.8127 $194.4477
71+ $3.6896 $261.9616
91+ $3.5666 $324.5606
122+ $3.1977 $390.1194
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,980 pieces
MOQ: 14 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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