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STGWT40V60DF

Part No STGWT40V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Trench gate field-stop IGBT, V series
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) @ Vge, Ic 2.3V @ 15V, 40A
Power - Max 283W
Switching Energy 456μJ (on), 411μJ (off)
Input Type Standard
Gate Charge 226nC
Td (on/off) @ 25°C 52ns/208ns
Test Condition 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) 41ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-3P-3, SC-65-3
Manufacturer Package TO-3P
Win Source Part Number 1261060-STGWT40V60DF
Manufacturer Homepage www.st.com
Family Name STGWT40V60DF
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2025
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGWT40V60DF CAD Model

Description

The STGWT40V60DF is a cutting-edge power transistor that marks a significant leap forward in the field of power electronics. Manufactured by STMicroelectronics, a leader in semiconductor solutions, this device is designed to meet the rigorous demands of modern high-efficiency power conversion systems.

Key Features:

  • Voltage Rating: The transistor has a voltage rating of 600V, making it suitable for a wide range of applications in power electronics, including industrial and automotive environments where high voltage operation is a necessity.
  • Current Capability: With a current rating of 40A, the STGWT40V60DF can handle significant power levels, ensuring reliable operation in applications such as motor drives, power supplies, and inverters.
  • Low On-Resistance: The low on-resistance (RDS(on)) of this power transistor minimizes conduction losses, which enhances overall efficiency and performance in power conversion systems.
  • Fast Switching Speed: The fast switching characteristics of the STGWT40V60DF enable high-frequency operation, which is crucial for reducing the size of passive components and improving power density.
  • Trench Gate Field-Stop Technology: Utilizing advanced trench gate field-stop IGBT technology, this device offers an optimal balance between conduction and switching losses, leading to improved thermal performance and reliability.

Applications:

  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Welding equipment
  • Induction heating systems
  • Electric vehicle (EV) charging stations

The STGWT40V60DF is not only robust but also features a co-packaged ultrafast soft recovery diode. This integrated diode further enhances the performance by reducing recovery losses and improving efficiency, especially in hard-switching conditions.

STMicroelectronics offers this device in a TO-247 long leads package, which is known for its excellent thermal properties and ease of mounting on a heat sink. This package ensures that the device can be cooled effectively, which is critical for maintaining performance and longevity in high-power applications.

Overall, the STGWT40V60DF from STMicroelectronics represents a state-of-the-art solution for designers looking to optimize their power conversion systems with a reliable, high-performance power transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0625 $52.8125
31+ $3.3333 $103.3323
47+ $3.2292 $151.7724
64+ $3.1250 $200.0000
83+ $3.0209 $250.7347
111+ $2.7083 $300.6213
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Availability: 300 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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