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STGWT40H65DFB

Part No STGWT40H65DFB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 80A 283W TO3P-3L
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 40A
Power - Max 283W
Switching Energy 498μJ (on), 363μJ (off)
Input Type Standard
Gate Charge 210nC
Td (on/off) at 25°C 40ns/142ns
Test Condition 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 62ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Part Number Series STGWT40
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813176-STGWT40H65DFB
Ultra Librarian 3D Model Ultra Librarian STGWT40H65DFB CAD Model

Description

STGWT40H65DFB - High-Efficiency IGBT from STMicroelectronics

The STGWT40H65DFB is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of ST's advanced Trench Gate Field-Stop technology, which focuses on achieving high efficiency in power conversion applications. The STGWT40H65DFB is particularly suitable for high-performance inverters found in energy-saving and eco-friendly solutions.

With a collector-emitter voltage of 650V and a collector current rating of 40A at 25°C, the STGWT40H65DFB is capable of handling high power levels while maintaining a low on-state voltage drop, thanks to its optimized conduction and switching characteristics. This results in reduced power losses and improved overall system efficiency, making it an ideal choice for applications such as solar inverters, UPS systems, and motor drives.

The device features a maximum junction temperature of 175°C, providing a robust thermal performance that ensures reliability even under extreme operating conditions. Additionally, the STGWT40H65DFB has a low thermal resistance, which further contributes to its ability to manage heat effectively.

The STGWT40H65DFB comes in a TO-247 long leads package, which is widely accepted in the industry for high-power applications due to its excellent heat dissipation properties. The package also facilitates easy mounting on heat sinks, which is crucial for maintaining the device's longevity and stability.

In terms of protection features, the STGWT40H65DFB is equipped with a co-packaged fast recovery diode, ensuring rapid recovery times and reduced electromagnetic interference (EMI). This is particularly important in applications where noise reduction and fast switching are critical.

Overall, the STGWT40H65DFB by STMicroelectronics represents a blend of performance, efficiency, and reliability. It is a testament to ST's commitment to providing advanced power electronics solutions that meet the needs of modern energy-efficient systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0552 $58.0488
47+ $2.5068 $117.8196
72+ $2.4285 $174.8520
99+ $2.3501 $232.6599
128+ $2.2718 $290.7904
171+ $2.0367 $348.2757
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Availability: 10,500 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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