The STGW80H65FB-4 is a state-of-the-art trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics. This high-performance IGBT is designed for a wide range of applications requiring high efficiency and fast switching. It is particularly suited for use in power conversion systems such as inverters, converters, and power supplies, as well as for motor drive applications.

Key Features

• Maximum Collector-Emitter Voltage (V<sub>CE): 650V, providing a comfortable margin for high voltage applications.
• Continuous Collector Current (I<sub>C): 80A at 25°C, ensuring high current handling capability.
• Low On-Voltage Drop (V<sub>CE(sat)): This feature reduces conduction losses and improves overall efficiency.
• High-Speed Switching: The device is optimized for fast switching, reducing switching losses and enabling high-frequency operation.
• Short-Circuit Ruggedness: It can withstand short-circuit conditions for a specified time, enhancing reliability and robustness in harsh environments.
• Co-Packaged Free-Wheeling Diode: An integrated fast recovery diode provides efficient freewheeling functionality, critical for many power applications.

Applications

The STGW80H65FB-4 is ideal for a variety of applications, including:

• Uninterruptible Power Supplies (UPS)
• Welding Equipment
• Solar Inverters
• Induction Heating Systems
• High-Performance Power Converters
• Electric Vehicle (EV) Chargers
• Motor Drives and Controllers

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STGW80H65FB-4 is manufactured with robustness and reliability in mind, ensuring that it meets the stringent requirements of industrial applications. It is also supported by comprehensive technical documentation and application support from STMicroelectronics, making integration into existing systems straightforward for designers and engineers.