STGW60H65DRF - STMicroelectronics Power Transistor

The STGW60H65DRF is a state-of-the-art power transistor from STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This 650V, 60A trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) is part of ST’s advanced PowerMESH™ lineup, optimized for performance in both hard-switching and soft-switching circuits.

Key Features

• High Voltage Capability: With a collector-emitter voltage (V<sub>CE) of 650V, the STGW60H65DRF is suitable for high voltage applications, providing ample headroom for voltage spikes and surges.
• High Current Rating: A continuous collector current (I<sub>C) of 60A at 25°C makes this device capable of handling high power loads, ensuring robust performance in demanding conditions.
• Low On-State Voltage: The device features a low V<sub>CE(sat), which reduces on-state power loss and improves overall efficiency, especially critical in high power applications.
• Fast Switching Speed: The fast-switching capability of the STGW60H65DRF minimizes switching losses and enables operation at higher frequencies, which can contribute to smaller and more efficient power supplies.
• Co-Packaged Diode: An integrated ultra-fast recovery diode provides additional protection against reverse voltage transients and reduces the need for external components.

Applications

The STGW60H65DRF is designed for a diverse set of applications, including but not limited to:

• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Motor Drives
• Welding Equipment
• Solar Inverters
• Inductive Heating
• Resonant Converters

Design Support

STMicroelectronics supports designers with a comprehensive suite of technical documentation, reference designs, and simulation tools to facilitate the integration of the STGW60H65DRF into various circuits and systems. This ensures a smooth design-in process and helps to accelerate time-to-market for products utilizing this high-performance IGBT.