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STGW40NC60WD

Part No STGW40NC60WD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 70A 250W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 70A
Pulsed Collector Current 230A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 302μJ (on), 349μJ (off)
Input Type Standard
Gate Charge 126nC
Turn-on and Turn-off delay time 33ns/168ns
Testing Conditions 390V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 45ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 212286-STGW40NC60WD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW40NC60WD CAD Model

Description

The STGW40NC60WD is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This IGBT is designed to meet the efficiency and reliability demands of modern electronic applications, including motor drives, uninterruptible power supplies (UPS), induction heating, and power factor correction circuits.

Key Features

  • High current capability: The STGW40NC60WD can handle continuous currents up to 40A, making it suitable for high-power applications.
  • High voltage rating: With a collector-emitter voltage (VCE) of 600V, it provides a comfortable safety margin for most industrial applications.
  • Low on-state voltage drop (VCE(sat)): This characteristic minimizes conduction losses and improves overall efficiency.
  • High-speed switching: The device features fast switching times, which are essential for reducing switching losses and improving performance in high-frequency circuits.
  • Co-packaged with a fast recovery diode: The inclusion of an anti-parallel diode enhances performance during the freewheeling phase of operation.

Performance and Reliability

The STGW40NC60WD is built using STMicroelectronics' advanced trench gate field-stop technology, which provides an optimal trade-off between conduction and switching losses. This technology enhances the device's performance by enabling lower on-state voltage and minimizing turn-off energy losses. Additionally, the device offers a very tight parameter distribution, which results in predictable and uniform performance across various units.

Applications

Due to its robust design and electrical characteristics, the STGW40NC60WD is well-suited for a wide range of applications. It is an excellent choice for high-efficiency converters and inverters in motor control systems, where precise and efficient speed and torque control are necessary. It is also ideal for power supplies where high reliability and power density are required, such as in UPS systems and power factor correction modules.

Environmental and Quality Standards

STMicroelectronics is committed to environmental sustainability and quality. The STGW40NC60WD is manufactured in facilities that comply with rigorous international standards, ensuring both the high reliability of the device and the minimal environmental impact of its production.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.9730 $59.5950
36+ $3.2599 $117.3564
55+ $3.1580 $173.6900
76+ $3.0561 $232.2636
98+ $2.9543 $289.5214
131+ $2.6486 $346.9666
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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