The ISO5851DW is a high-performance, isolated gate driver designed by Texas Instruments for motor control and power delivery systems. This advanced driver is engineered to drive high-side N-channel power MOSFETs and IGBTs with precision and robustness. The ISO5851DW is housed in a compact SOIC-16 wide body package, making it a space-efficient solution for a variety of applications.

Key Features

• High Isolation Voltage: The ISO5851DW offers an impressive isolation voltage of 5.7 kV peak, providing reliable operation in high-voltage environments and ensuring safety and compliance with industry standards.
• Robust Gate Drive: With a peak output current of +/-2.5 A, this gate driver can effectively switch power transistors at high speeds, reducing switching losses and improving overall efficiency.
• Desaturation Detection: The device includes a desaturation detection feature that helps protect the system from overcurrent conditions, enhancing system reliability.
• Miller Clamp: An integrated Miller clamp function helps prevent gate voltage ringing and false turn-on of the power transistor, which is crucial for high-speed switching applications.
• Wide Operating Temperature Range: The ISO5851DW is designed to operate over a temperature range of -40°C to +125°C, ensuring stable performance in harsh environments.

Applications

The ISO5851DW is ideal for a wide range of applications, including but not limited to:

• Industrial Drives
• Renewable Energy Systems
• Power Supplies
• Welding Equipment
• Electric Vehicles

Reliability and Protection

Equipped with under-voltage lockout, over-temperature shutdown, and fault reporting, the ISO5851DW ensures system protection and reliability. Its reinforced insulation and high CMTI (Common-Mode Transient Immunity) minimize the effects of high-voltage transients, maintaining signal integrity and system safety.

With its combination of performance, protection features, and Texas Instruments' quality, the ISO5851DW is a superior choice for driving high-side power transistors in advanced electronic systems.