STGW35HF60W - IGBT from STMicroelectronics

The STGW35HF60W is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, designed to handle a wide range of high power applications. This IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors, making it an efficient choice for high-efficiency switching applications.

Key Features

• Wide Operating Voltage Range: The device is capable of handling a collector-emitter voltage of up to 600V, which makes it suitable for a variety of high voltage applications.
• High Current Capacity: With a continuous collector current rating of 35A at 25°C, this IGBT can manage significant power levels, ideal for demanding electrical environments.
• Low On-Voltage Drop (VCE(sat)): The STGW35HF60W features a low saturation voltage, typically around 2.1V, which helps in reducing power losses and improving efficiency.
• High Switching Speed: The device offers fast switching speeds, which is critical for reducing switching losses, especially in high-frequency applications.
• Co-Packaged with Free Wheeling Diode: The IGBT comes with an integrated fast recovery diode, which is essential for protecting the device from voltage spikes and for use in circuits that require a freewheeling diode.

Applications

The STGW35HF60W is designed to be versatile and can be used in a wide array of applications, such as:

• Uninterruptible Power Supplies (UPS)
• High-performance AC and DC motor drives
• Power factor correction circuits
• Inductive heating and welding equipment
• Switched Mode Power Supplies (SMPS)
• Renewable energy inverters

With its robust design and high power handling capabilities, the STGW35HF60W is a reliable choice for engineers and designers looking to implement an IGBT in their high-voltage and high-power electronic designs. The device's combination of high efficiency, durability, and performance makes it a standout component in STMicroelectronics' power semiconductor portfolio.