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STGW30V60F

Part No STGW30V60F
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 60A 260W TO247 / Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) @ Vge, Ic 2.3V @ 15V, 30A
Power - Max 260W
Switching Energy 383μJ (on), 233μJ (off)
Input Type Standard
Gate Charge 163nC
Td (on/off) @ 25°C 45ns/189ns
Test Condition 400V, 30A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 795619-STGW30V60F
Popularity Medium
Supply and Demand Status Limited
Family Name STGW30V60F
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STGW30V60F CAD Model

Description

STGW30V60F - IGBT from STMicroelectronics

The STGW30V60F is a high-performance insulated gate bipolar transistor (IGBT) produced by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to offer a combination of fast switching, low on-state voltage, and high thermal performance, making it an ideal choice for a wide range of power applications.

Key Features:

  • Voltage Rating: The device has a collector-emitter voltage rating of 600V, which allows it to handle high voltage applications with ease.
  • Current Rating: With a continuous collector current rating of 30A at 25°C, and a pulsed collector current of 60A, the STGW30V60F can manage significant power levels.
  • Low On-State Voltage: This IGBT features a low on-state voltage drop, which enhances its efficiency by minimizing conduction losses.
  • High Switching Speed: The STGW30V60F is optimized for fast switching, reducing switching losses and improving overall performance in applications where high-frequency operation is critical.
  • Co-Packaged Diode: The device includes a soft recovery anti-parallel diode, which is co-packaged with the IGBT. This feature simplifies circuit design and enhances the performance of the overall system.
  • High Thermal Performance: Thanks to its robust package design, the STGW30V60F exhibits excellent thermal characteristics, ensuring reliability and longevity even under high operating temperatures.

Applications:

The STGW30V60F is well-suited for a variety of applications, including but not limited to:

  • Motor drives and controls
  • Uninterruptible power supplies (UPS)
  • Power factor correction circuits
  • Induction heating systems
  • Welding equipment

Quality and Reliability:

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGW30V60F is no exception, providing designers with a robust power transistor that can withstand the rigors of demanding industrial environments.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the official STMicroelectronics website or contact their local sales office.

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Quantity Unit Price Ext. Price
8+ $6.6881 $53.5048
19+ $5.4877 $104.2663
29+ $5.3162 $154.1698
39+ $5.1447 $200.6433
51+ $4.9732 $253.6332
68+ $4.4588 $303.1984
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MOQ: 8 pcs
Order Increment : 1 pcs
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