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STGW15M120DF3

Part No STGW15M120DF3
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1200V 30A 259W / Low thermal resistance
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.3V at 15V, 15A
Power - Max 259W
Switching Energy 550μJ (on), 850μJ (off)
Input Type Standard
Gate Charge 226nC
Td (on/off) at 25°C 26ns/122ns
Test Condition 600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr) 270ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Part Number Series STGW15
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813920-STGW15M120DF3
Ultra Librarian 3D Model Ultra Librarian STGW15M120DF3 CAD Model

Description

The STGW15M120DF3 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to meet the demands of high-efficiency and high-switching-speed applications, making it an ideal choice for a variety of power electronics systems.

Key Features

  • High Current Capability: The STGW15M120DF3 is capable of handling continuous collector currents up to 15A, with a maximum rating of 30A in pulsed mode, allowing it to drive high-power applications with ease.
  • High Voltage Rating: With a collector-emitter voltage rating of 1200V, this IGBT can be used in high-voltage circuits, offering excellent performance in applications such as motor drives, inverters, and power supplies.
  • Low On-State Voltage Drop (Vce(on)): The device has been optimized to have a low on-state voltage drop to increase efficiency, especially in applications where conduction losses are critical.
  • Short-Circuit Rating: It features a short-circuit withstand time of 10µs, providing robust performance and reliability under fault conditions.
  • Co-Packaged Diode: The STGW15M120DF3 includes a fast and soft co-packaged freewheeling diode, which enhances the switching performance and reduces the overall component count in the circuit design.

Applications

The versatility of the STGW15M120DF3 allows it to be used in a wide range of applications, including but not limited to:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Induction Heating Systems
  • High-Frequency Converters
  • Welding Equipment

Advanced Technology

STMicroelectronics has integrated the latest advancements in IGBT technology to ensure the STGW15M120DF3 delivers superior performance. The device utilizes a trench gate field-stop structure that provides a combination of low on-state voltage and high-speed switching. This technology also contributes to reduced switching losses, making the IGBT suitable for high-frequency operation.

Environmental and Quality Certifications

The STGW15M120DF3 is manufactured to meet the highest quality and reliability standards. It complies with international environmental regulations, including RoHS and REACH, ensuring an eco-friendly product lifecycle.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $4.0206 $60.3090
36+ $3.2991 $118.7676
55+ $3.1959 $175.7745
75+ $3.0928 $231.9600
97+ $2.9898 $290.0106
130+ $2.6804 $348.4520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,200 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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