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STGW100N30

Part No STGW100N30
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family IGBTs - Single
Win Source Part Number 194390-STGW100N30
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW100N30 CAD Model

Description

STGW100N30 by STMicroelectronics

The STGW100N30 is a high-performance N-channel 300V power MOSFET manufactured by the renowned semiconductor company, STMicroelectronics. Designed with state-of-the-art MDmesh™ technology, this power MOSFET is optimized for a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-efficiency converters.

One of the standout features of the STGW100N30 is its extremely low on-resistance (RDS(on)), which significantly reduces conduction losses and enhances the overall efficiency of power management systems. The device is capable of handling continuous drain currents up to 100A, making it suitable for high-power applications. Additionally, its robust design ensures reliable performance even under high stress and in harsh environments.

The STGW100N30 boasts a fast-switching capability, which is critical for reducing switching losses in power conversion circuits. This feature is particularly beneficial for high-frequency operations where efficiency is paramount. The MOSFET also includes an integrated gate charge (Qg), which minimizes driver power consumption and simplifies the design of driving circuits.

With a maximum junction temperature of 150°C, the STGW100N30 can operate reliably over a wide temperature range, ensuring stability and long-term durability. Its TO-247 package is designed for easy mounting and heat dissipation, which is crucial for maintaining thermal performance and extending the lifespan of the device.

Key Features:

  • MDmesh™ technology for reduced on-resistance and high switching efficiency
  • 100A continuous drain current capability
  • 300V drain-source breakdown voltage
  • Low gate charge for efficient driving
  • High-speed switching performance
  • Robust thermal management with a maximum junction temperature of 150°C
  • TO-247 package for efficient heat dissipation

Overall, the STGW100N30 from STMicroelectronics is a versatile and reliable power MOSFET that offers superior performance for designers and engineers looking to optimize their power conversion systems for efficiency and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.5297 $70.5891
6+ $19.3070 $115.8420
10+ $18.7029 $187.0290
13+ $18.1000 $235.3000
17+ $17.4971 $297.4507
23+ $15.6872 $360.8056
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,600 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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