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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 440V
Maximum Current Collector 20A
Pulsed Collector Current 40A
Collector-emitter saturation voltage(Max) 1.8V @ 4.5V, 10A
Maximum Power Dissipation 125W
Total Switching Energy(Ets) 2.4mJ (on), 5mJ (off)
Input Type Standard
Gate Charge 28nC
Turn-on and Turn-off delay time 1.3μs/8μs
Testing Conditions 328V, 10A, 1 kOhm, 5V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 042918-STGP10NB37LZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGP10NB37LZ CAD Model

Description

STGP10NB37LZ - IGBT from STMicroelectronics

The STGP10NB37LZ is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a leader in semiconductor technology. This device is designed to meet the demands of high-efficiency, fast-switching applications that require robust and reliable components.

With a collector-emitter voltage of 370V and a collector current rating of 20A at 25°C, the STGP10NB37LZ is a powerhouse in a compact TO-220 package. This IGBT is designed for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), induction heating, and inverter circuits for renewable energy systems.

One of the key features of the STGP10NB37LZ is its low on-state voltage drop (VCE(sat)) which minimizes conduction losses and enhances overall system efficiency. This characteristic is particularly important in applications where energy efficiency is a critical concern, such as in electric vehicles and solar inverters.

The device also boasts a fast switching speed, which is essential for reducing switching losses and improving performance in high-frequency circuits. The STGP10NB37LZ's high-speed switching capability allows for better performance in power conversion applications, contributing to the miniaturization of electronic systems by enabling the use of smaller passive components.

To ensure reliability, the STGP10NB37LZ is equipped with a co-packaged fast recovery diode, which provides protection against reverse voltage transients and enhances the performance during the turn-off phase. This feature is particularly beneficial in hard-switching environments where the IGBT is subject to harsh operating conditions.

STMicroelectronics has also taken steps to ensure that the STGP10NB37LZ meets stringent quality and environmental standards. The device is RoHS compliant, reflecting STMicroelectronics' commitment to producing environmentally friendly products that reduce the ecological footprint of electronic systems.

In summary, the STGP10NB37LZ from STMicroelectronics is a high-performance IGBT that offers excellent efficiency, fast switching, and robust protection features. It is a reliable choice for engineers looking to optimize their high-voltage and high-current applications in a variety of industrial, automotive, and renewable energy sectors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.3557 $70.6710
70+ $1.9339 $135.3730
105+ $1.8731 $196.6755
145+ $1.8124 $262.7980
185+ $1.7528 $324.2680
250+ $1.5705 $392.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,470 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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