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STGF20V60DF

Part No STGF20V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT BIPO 600V 20A TO-220 / IGBT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr STMicroelectronics
Package Tube
Product Status Active
Base Product Number STGF20
Standard Package 50 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 935370-STGF20V60DF
Ultra Librarian 3D Model Ultra Librarian STGF20V60DF CAD Model

Description

STMicroelectronics STGF20V60DF IGBT

The STGF20V60DF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics, designed for a wide range of high-efficiency applications. This device is tailored for performance-driven systems that require robust and reliable power switching capabilities. The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors, making it an ideal choice for high-performance power conversion in both industrial and consumer applications.

With a maximum collector-emitter voltage of 600V, the STGF20V60DF is well-suited for applications that operate under high voltage conditions. Its collector current rating of 40A at 25°C ensures that it can handle significant power without overheating, thanks to its maximum junction temperature of 175°C. This high current capability is essential for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

The device features a low on-state voltage drop (Vce(sat)) which minimizes conduction losses and improves overall efficiency. Additionally, the IGBT's fast switching characteristics reduce switching losses, further enhancing the efficiency of the systems in which it is used. The STGF20V60DF also boasts a co-packaged fast recovery anti-parallel diode, which is optimized for low forward voltage drop and minimal reverse recovery time, thus reducing losses during the diode's conduction and switching periods.

One of the key benefits of the STGF20V60DF is its robustness. The device is engineered to withstand harsh conditions, featuring a high ruggedness rating. It also includes an internal soft recovery feature that contributes to the reduction of electromagnetic interference (EMI), making it easier to meet regulatory requirements for EMI emissions in power electronics systems.

For designers and engineers looking for a high-performance IGBT that offers a combination of efficiency, reliability, and power handling, the STGF20V60DF from STMicroelectronics is an excellent choice. It provides the necessary features to optimize the performance of advanced power conversion systems, while also ensuring long-term reliability and cost-effectiveness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2617 $58.7106
44+ $2.6761 $117.7484
67+ $2.5930 $173.7310
93+ $2.5087 $233.3091
120+ $2.4255 $291.0600
160+ $2.1749 $347.9840
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Availability: 2,420 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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