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STGD5NB120SZT4

Part No STGD5NB120SZT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1200V 10A 75W DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 10A
Pulsed Collector Current 10A
Collector-emitter saturation voltage(Max) 2V @ 15V, 5A
Maximum Power Dissipation 75W
Total Switching Energy(Ets) 2.59mJ (on), 9mJ (off)
Input Type Standard
Turn-on and Turn-off delay time 690ns/12.1μs
Testing Conditions 960V, 5A, 1 kOhm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 031196-STGD5NB120SZT4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGD5NB120SZT4 CAD Model

Description

STGD5NB120SZT4 IGBT from STMicroelectronics

The STGD5NB120SZT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, a leader in semiconductor solutions. Designed for a wide range of applications, this IGBT is capable of providing an optimal balance between switching speed and on-state power loss, making it ideal for high-efficiency power management tasks.

With a collector-emitter voltage rating of 1200V and a collector current rating of 5A at 25°C, the STGD5NB120SZT4 is well-suited for applications that require robust voltage handling capabilities. Its maximum junction temperature of 175°C allows for operation in high-temperature environments, ensuring reliability and longevity in challenging conditions.

One of the standout features of the STGD5NB120SZT4 is its trench gate field-stop technology, which provides enhanced performance through lower on-state voltage (V<sub>CE(sat)) and reduced switching losses. This technology allows for efficient conduction and switching, leading to energy savings and reduced heat generation in the application circuitry.

The device comes in a surface-mount D2PAK package, which is compact and offers excellent thermal performance. The package design ensures that the STGD5NB120SZT4 can be easily integrated into various circuit designs without the need for extensive space or additional cooling solutions.

Furthermore, the STGD5NB120SZT4 boasts a co-packaged freewheeling diode, which is a crucial component for protecting the IGBT from reverse voltage transients. This integrated diode simplifies the design process and reduces the need for external components, enhancing the overall system reliability and reducing the bill of materials.

This IGBT is perfect for a range of power applications, including but not limited to, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor drives, and high-frequency converters. Its robust design and advanced technology make it a preferred choice for designers seeking to optimize their power systems for efficiency and performance.

Overall, the STGD5NB120SZT4 from STMicroelectronics represents a blend of cutting-edge technology and practical design, offering a reliable and efficient solution for modern power electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3592 $54.3680
90+ $1.1153 $100.3770
140+ $1.0804 $151.2560
195+ $1.0456 $203.8920
250+ $1.0107 $252.6750
335+ $0.9062 $303.5770
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Availability: 1,916 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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