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STGB40V60F

Part No STGB40V60F
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Power - Max 283 W
Switching Energy 456µJ (on), 411µJ (off)
Input Type Standard
Gate Charge 226 nC
Td (on/off) @ 25°C 52ns/208ns
Test Condition 400V, 40A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB40
Other Names 497-14978-2,497-14978-1,497-14978-6
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277400-STGB40V60F
Ultra Librarian 3D Model Ultra Librarian STGB40V60F CAD Model

Description

STGB40V60F - IGBT from STMicroelectronics

The STGB40V60F is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader. This IGBT is designed for a wide range of high-power applications, offering an optimal trade-off between switching performance and on-state behavior, which is crucial for efficiency and reliability.

Key Features

  • Voltage Rating: The STGB40V60F is rated for a collector-emitter voltage of 600V, making it suitable for applications requiring high voltage operation.
  • Current Capacity: With a continuous collector current of 40A at 25°C, this IGBT can handle significant power levels, suitable for demanding electrical environments.
  • Low On-State Voltage Drop: The device exhibits a low VCE(on) typically at 1.85V, which enhances its efficiency by minimizing conduction losses.
  • High-Speed Switching: It features fast switching characteristics with a low turn-off switching energy, which helps in reducing switching losses and improving overall system performance.
  • Co-Packaged Free-Wheeling Diode: The STGB40V60F includes an integrated fast recovery diode, which is optimized for the high-speed switching of the IGBT, thereby simplifying circuit design and reducing component count.
  • Temperature Performance: It is designed to operate reliably over a wide temperature range, with a maximum operating junction temperature of 175°C.

Applications

The versatility of the STGB40V60F allows it to be used in a variety of applications including:

  • Motor drives and inverters
  • Uninterruptible power supplies (UPS)
  • Power factor correction circuits
  • Induction heating
  • Welding equipment

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STGB40V60F is no exception and is manufactured to meet the high standards of reliability and performance expected from ST products. It is available in a TO-263 (D2PAK) package, which is suitable for surface mount technology and ensures robustness and ease of integration into various circuit designs.

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