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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 440V
Current - Collector (Ic) (Maximum) 20A
Current - Collector Pulsed (Icm) 40A
Vce(on) (Maximum) at Vge, Ic 1.8V at 4.5V, 10A
Maximum Power 125W
Switching Energy 2.4mJ (on), 5mJ (off)
Input Type Standard
Gate Charge 28nC
Td (on/off) at 25°C 1.3μs/8μs
Test Condition 328V, 10A, 1kOhm, 5V
Temperature Range - Operating -65°C ~ 175°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Family Part Number STG*10NB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261000-STGB10NB37LZ
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGB10NB37LZ CAD Model

Description

STGB10NB37LZ - STMicroelectronics IGBT

The STGB10NB37LZ is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, designed to cater to a wide range of power electronics applications. This device combines the best features of both MOSFETs and bipolar transistors, offering superior efficiency, fast switching, and high current capability.

With a breakdown voltage of 370V and a continuous collector current rating of 10A, the STGB10NB37LZ is well-suited for applications that require robust power handling capabilities. The IGBT is optimized for minimal conduction losses, thanks to its low on-state voltage, which translates to reduced power dissipation and improved overall system efficiency.

The device features a co-packaged fast recovery diode, which is critical for applications that involve high-speed switching. The diode ensures that any reverse recovery losses are minimized, thereby enhancing the performance of the IGBT in circuits like inverters, converters, and motor drives. This makes the STGB10NB37LZ an excellent choice for industrial, automotive, and consumer applications where reliability and efficiency are of paramount importance.

STMicroelectronics has designed the STGB10NB37LZ with a robust and high-performance technology that ensures the device operates reliably even under challenging conditions. It boasts a maximum operating junction temperature of 150°C, which means it can sustain performance without degradation even at elevated temperatures.

The STGB10NB37LZ comes in a D2PAK package, which is known for its compact size and excellent thermal performance. The package is designed to be mounted on a heatsink, which is essential for applications that generate significant amounts of heat. The D2PAK package also allows for easy integration into various circuit designs, providing designers with flexibility and ease of use.

In summary, the STGB10NB37LZ from STMicroelectronics is a powerful and reliable IGBT that offers a combination of high-speed switching, low conduction losses, and robust thermal performance. It is an ideal choice for designers looking to improve the efficiency and reliability of their power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.8080 $56.1600
49+ $2.3041 $112.9009
76+ $2.2320 $169.6320
104+ $2.1600 $224.6400
135+ $2.0880 $281.8800
180+ $1.8720 $336.9600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 399 pieces
MOQ: 20 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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