The APT15GT60BRDQ1 is a 600V, 15A fast IGBT (Insulated Gate Bipolar Transistor) from Microsemi, formerly Advanced Power Technology (APT). This device is designed for high-speed switching applications, offering a combination of low conduction losses and fast switching characteristics.

Applications:

• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC) circuits
• Welding equipment
• Induction heating

Features:

• High speed switching
• Low saturation voltage (VCE(sat))
• Avalanche rated
• Optimized for low conduction losses
• RoHS compliant
• Integrated anti-parallel diode

Benefits:

• Improved efficiency in power conversion circuits
• Reduced switching losses
• Enhanced reliability due to avalanche rating
• Simplified circuit design with integrated diode
• Compliance with environmental regulations

Additional Details:

The APT15GT60BRDQ1 incorporates a fast recovery diode, which further improves the efficiency and reduces switching losses. The device is designed for operation at relatively high frequencies. Its fast switching capability allows designers to reduce the size and weight of passive components such as inductors and capacitors. The IGBT is typically packaged in a TO-247 package, allowing for efficient heat dissipation.

Technical Specifications:

• Collector-Emitter Voltage (VCE): 600V
• Continuous Collector Current (IC): 15A
• Gate-Emitter Voltage (VGE): ±20V
• Collector-Emitter Saturation Voltage (VCE(sat)): Typically 1.6V at IC = 15A
• Turn-On Time (ton): Typically 30ns
• Turn-Off Time (toff): Typically 70ns
• Operating Temperature: -55°C to +150°C
• Package: TO-247