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STFI13NM60N

Part No STFI13NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Low input capacitance and gate charge
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 790pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 25W (Tc)
Rds On (Maximum) @ Id, Vgs 360 mOhm @ 5.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAKFP (TO-281)
Package TO-262-3 Full Pack, I2Pak
Win Source Part Number 1260988-STFI13NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Family Name STFI13NM60N
Introduction Date June 21, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STFI13NM60N CAD Model

Description

The STFI13NM60N is a cutting-edge N-channel Power MOSFET manufactured by STMicroelectronics, a global leader in semiconductor solutions. This MOSFET is part of ST's MDmesh™ series, which is renowned for its excellent energy efficiency and performance in high-voltage applications. It is designed to meet the rigorous requirements of modern electronic circuits, providing a reliable and effective solution for power management and conversion.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, the STFI13NM60N is ideal for handling high voltage operations, making it suitable for a variety of industrial and consumer applications.
  • Low On-Resistance: The device features an on-resistance (R<sub>DS(on)) as low as 0.29 ohms, which translates to reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: The fast switching characteristics of this MOSFET make it an excellent choice for high-frequency power converters and inverters.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) ensures minimal power dissipation during switching, contributing to energy savings.
  • Enhanced Ruggedness: The STFI13NM60N is designed to withstand harsh operating conditions, providing a robust solution for demanding applications.

Applications

The versatility of the STFI13NM60N allows it to be used in a wide range of applications, including:

  • Switching regulators
  • Power supplies (SMPS)
  • DC-AC inverters for solar energy systems
  • LED lighting solutions
  • High-efficiency DC-DC converters
  • Motor drives and controls

Package and Quality Assurance

The STFI13NM60N comes in an ISOTOP package, which is known for its high power dissipation and compact size. STMicroelectronics ensures the highest quality and reliability of its products, with rigorous testing and quality control measures in place. This product is compliant with the RoHS directive, reflecting ST's commitment to environmental sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0765 $59.2075
135+ $0.8836 $119.2860
205+ $0.8559 $175.4595
280+ $0.8281 $231.8680
365+ $0.8004 $292.1460
485+ $0.7173 $347.8905
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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