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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 24A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 140mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 41.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1790pF at 100V
Power Dissipation (Maximum) 34W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260969-STF33N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF33N65M2 CAD Model

Description

STF33N65M2 - N-channel 650 V, 0.076 Ohm typ., 31 A MDmesh™ M2 Power MOSFET in a TO-220FP package from STMicroelectronics

The STF33N65M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is part of their MDmesh™ M2 series. This device is engineered using an innovative proprietary vertical structure that combines a new charge balance mechanism, resulting in reduced on-resistance and improved switching performance.

With a voltage rating of 650 V, the STF33N65M2 is particularly suitable for high-efficiency applications requiring high voltage capability. Its low on-resistance of just 0.076 Ohms (typical) ensures minimal power loss, making it ideal for a wide range of power conversion applications, including switch-mode power supplies, lighting, welding, and solar inverters.

The STF33N65M2 comes in a TO-220FP package, which is well-known for its robustness and superior thermal performance. This package allows for efficient heat dissipation, which is crucial for maintaining stability and extending the lifespan of the device when operating at high currents and voltages.

Key Features:

  • Maximum continuous drain current of 31 A, providing ample current handling capability for demanding applications.
  • Low gate charge (Qg) and low effective output capacitance (Co(er)), which enhance the device's switching performance and reduce switching losses.
  • 100% avalanche tested, ensuring reliability and robustness in applications where the MOSFET may be subjected to high-energy pulses.
  • Zener-protected, offering intrinsic transient voltage protection and eliminating the need for external protection circuits in certain applications.

Applications for the STF33N65M2 are vast and varied, thanks to its high efficiency and reliability. It is particularly well-suited for high-performance power supplies that require high voltage and current ratings, as well as for industrial applications where ruggedness is a key consideration.

STMicroelectronics' commitment to innovation and quality is reflected in the STF33N65M2, making it a top choice among professionals seeking a high-voltage Power MOSFET that does not compromise on performance or efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6139 $52.2780
47+ $2.1447 $100.8009
73+ $2.0777 $151.6721
100+ $2.0107 $201.0700
129+ $1.9437 $250.7373
173+ $1.7426 $301.4698
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 600 pieces
MOQ: 20 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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