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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH3
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1180pF @ 50V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 35W (Tc)
Rds On (Maximum) @ Id, Vgs 850 mOhm @ 3.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220FP
Package TO-220-3 Full Pack
Win Source Part Number 1260929-STF11N65K3
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STF11N65K3
Introduction Date June 30, 2009
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STF11N65K3 CAD Model

Description

Introducing the STF11N65K3 - High-Performance Power MOSFET by STMicroelectronics

The STF11N65K3 is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is part of the MDmesh™ K3 series, which is renowned for its outstanding efficiency, especially in light-load conditions and high-switching applications. The STF11N65K3 is a perfect choice for a wide range of power applications, including switched-mode power supplies (SMPS), lighting, welding, solar inverters, and industrial applications.

Key Features:

  • Voltage Rating: The STF11N65K3 is designed to handle a maximum voltage of 650V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.38 ohms, this MOSFET ensures minimal power loss and higher efficiency in electronic circuits.
  • High Current Rating: The device can support a continuous drain current (I<sub>D) of up to 11A, allowing it to handle significant power levels.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) enhances the switching performance, which is critical for high-frequency applications.
  • Zener-Protected: The MOSFET comes with an integrated Zener diode on the gate, providing protection against electrostatic discharge (ESD).

Advantages:

The STF11N65K3 MOSFET is designed using STMicroelectronics' advanced MDmesh™ K3 technology, which provides the following advantages:

  • Improved dv/dt capability and noise immunity for better reliability in rugged environments.
  • Optimized for resonant and soft-switching topologies, offering flexibility in circuit design.
  • Enhanced thermal performance due to the package design, ensuring stability under various operating conditions.

Applications:

Thanks to its robust design and high-performance characteristics, the STF11N65K3 is suitable for a multitude of applications, including:

  • High-efficiency SMPS (Switched-Mode Power Supplies)
  • LED lighting drivers
  • Inverters for renewable energy sources such as solar panels
  • Welding equipment
  • High-performance computing and server power supplies
  • Industrial power applications

With the STF11N65K3, designers can achieve a balance between efficiency and reliability, ensuring that their products meet the highest standards of performance and durability. STMicroelectronics continues to innovate, providing components that push the boundaries of power management technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $21.0211 $84.0844
8+ $17.2489 $137.9912
12+ $16.7094 $200.5128
16+ $16.1700 $258.7200
21+ $15.6318 $328.2678
28+ $14.0149 $392.4172
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 100 pieces
MOQ: 4 pcs
Order Increment : 1 piece
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