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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MESH OVERLAY
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2420pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 52 mOhm @ 20A, 10V
Operating Temperature Range -65°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260655-STB40NS15T4
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Family Name STB40NS15
Introduction Date October 04, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STB40NS15T4 CAD Model

Description

The STB40NS15T4 is a state-of-the-art N-Channel MOSFET manufactured by STMicroelectronics, a global semiconductor leader known for its commitment to delivering energy-efficient and high-performance solutions. This MOSFET is part of the STripFET™ IV series, which is renowned for its low on-state resistance and low gate charge, making it an excellent choice for high-efficiency power management applications.

Featuring a breakdown voltage of 150V and a continuous drain current of 40A, the STB40NS15T4 is designed for use in a wide range of applications, including DC-DC converters, motor control circuits, and power management functions in computing and telecommunications equipment. With its robust and durable design, the STB40NS15T4 ensures reliable operation even under challenging conditions.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency.
  • High Switching Performance: Thanks to its low gate charge (Q<sub>g), the STB40NS15T4 offers fast switching speeds, which is crucial for applications requiring high-frequency operation.
  • 150V Drain-Source Voltage (V<sub>DS): The high breakdown voltage allows the MOSFET to handle high-voltage applications with ease.
  • 40A Continuous Drain Current (I<sub>D): This feature enables the MOSFET to support high current loads, making it suitable for power-intensive applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and longevity in the field.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Systems
  • Power Management for Computing
  • Telecommunications Equipment

The STB40NS15T4 comes in a D2PAK package, which is ideal for surface-mount technology (SMT) and offers excellent thermal performance. Its design is optimized for compatibility with automated assembly processes, reducing manufacturing costs and time-to-market for products incorporating this advanced MOSFET.

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