Product Overview: STD90N02LT4 MOSFET by STMicroelectronics

The STD90N02LT4 is a high-performance N-channel MOSFET developed by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to target a wide range of applications requiring efficient power management and high current handling capabilities. With its advanced technology, the STD90N02LT4 offers low on-resistance, high switching speeds, and excellent thermal performance, making it an ideal choice for power supply, automotive, and industrial applications.

Key Features

• Low Threshold Drive: The device features a low threshold voltage, enabling it to be driven at lower gate voltages, which can lead to reduced power consumption in certain applications.
• High Current Capability: The STD90N02LT4 is capable of handling continuous drain currents up to 90A, making it suitable for high-power applications.
• Low On-Resistance (R_DS(on)): With an on-resistance as low as 8.7 mΩ, this MOSFET ensures minimal power loss during operation, contributing to higher efficiency in electronic circuits.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness in applications where the MOSFET is subject to high energy pulses.

Applications

The versatility of the STD90N02LT4 allows it to be used in a variety of applications, including:

• Switching regulators
• DC/DC converters
• Motor control circuits
• Power management systems
• Automotive applications

Technical Specifications

The STD90N02LT4 boasts impressive technical specifications that make it a robust choice for demanding applications:

• Voltage - Rated: 24V
• Current Rating: 90A
• Power Dissipation: 48W
• R_DS(on): 8.7 mΩ
• Package / Case: DPAK (TO-252)

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STD90N02LT4 is no exception, with its design and manufacturing processes conforming to the stringent industry standards for quality and reliability. Customers can trust the performance and longevity of this MOSFET in their electronic designs.