STD5NB30 - N-channel 300V - 0.65Ω - 4A DPAK/IPAK STripFET™ II Power MOSFET

STMicroelectronics' STD5NB30 is a cutting-edge power MOSFET designed to deliver high efficiency and performance for a wide range of applications. The device is part of the STripFET™ II series, which is known for its low on-resistance and low gate charge, making it a preferred choice for power management tasks.

Key Features

• Voltage Rating: The STD5NB30 has a drain-source voltage (V_DS) of 300V, making it suitable for high-voltage applications.
• Low On-Resistance: With an on-resistance (R_DS(on)) of only 0.65Ω, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
• Current Capacity: It can handle continuous drain current (I_D) up to 4A, which is adequate for a range of moderate power applications.
• Package Options: Available in both DPAK and IPAK packages, the STD5NB30 offers flexibility in design for surface mount or through-hole PCB assembly.
• Low Gate Charge: The low gate charge (Q_g) enhances the switching performance, which is crucial for applications requiring fast switching capabilities.

Applications

The STD5NB30 is ideal for use in a variety of applications, including:

• Switching applications
• Power supplies
• Motor control
• Lighting
• Adapters and chargers
• DC-DC converters

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STD5NB30 is no exception, and it has been rigorously tested to ensure performance under various conditions. Its robustness is guaranteed by ST's proven track record in manufacturing high-voltage power MOSFETs.

Environmental Compliance

Consistent with STMicroelectronics' dedication to environmental sustainability, the STD5NB30 is manufactured with eco-friendly materials and processes, complying with international standards such as RoHS.