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STD11N60DM2

Part No STD11N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10A DPAK / N-Channel 650 V 10A (Tc) 110W (Tc) Surface Mount DPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 614 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD11
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16925-2,497-16925-1,497-16925-6
Standard Package 2,500
Win Source Part Number 1014710-STD11N60DM2
Ultra Librarian 3D Model Ultra Librarian STD11N60DM2 CAD Model

Description

STD11N60DM2 - High Performance N-Channel MOSFET

The STD11N60DM2 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This MOSFET is part of ST's MDmesh™ DM2 series, which utilizes an innovative proprietary vertical process technology that is optimized for high switching frequencies.

Key Features

  • High Voltage Capability: With a drain-source voltage (VDS) of 600V, the STD11N60DM2 is suitable for high-voltage applications, ensuring robust performance even under stressful conditions.
  • Low On-Resistance: The on-resistance (RDS(on)) is extremely low, resulting in minimal conduction losses and improved overall efficiency.
  • Fast Switching Speed: The device features fast switching characteristics, which reduce switching losses and are ideal for high-frequency applications.
  • Reduced Gate Charge: A low gate charge (Qg) ensures that less energy is required to turn the MOSFET on and off, further enhancing the efficiency of the device.

Applications

The STD11N60DM2 is versatile and can be used in an array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Motor Control
  • Power Management Functions

Advanced Technology

The MOSFET incorporates STMicroelectronics' second generation of MDmesh™ technology, which combines a vertical structure with a strip layout to yield one of the world's best RDS(on) area figures. This technology is specifically designed to address the requirements of today's high-efficiency power electronics.

Package Details

The STD11N60DM2 comes in a surface-mount DPAK (TO-252) package, which is compact and offers a low thermal resistance path for heat dissipation. This package is well-suited for automated assembly processes, and its size is beneficial for applications where space is at a premium.

Quality and Reliability

STMicroelectronics is known for its commitment to quality and reliability. The STD11N60DM2 is no exception and is manufactured to meet the highest standards, ensuring stable and reliable performance across its lifespan.

For engineers and designers looking for a robust, high-performance N-channel MOSFET, the STD11N60DM2 offers a compelling solution with its advanced features and proven technology from STMicroelectronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5988 $55.9580
80+ $1.3119 $104.9520
120+ $1.2709 $152.5080
165+ $1.2299 $202.9335
215+ $1.1889 $255.6135
285+ $1.0659 $303.7815
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,330 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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