The STB16NM50N is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the innovative MDmesh™ II technology. This advanced technology is known for its outstanding on-resistance and switching performance, making it an ideal choice for a wide range of power applications, including high-efficiency power supplies, power factor correction (PFC), and electronic lamp ballasts.

Key Features

• High Voltage Capability: With a drain-source voltage (V_DS) of 500 V, the STB16NM50N is suitable for applications that require high voltage operation, ensuring reliability and robustness in demanding environments.
• Low On-Resistance: The device boasts an exceptionally low on-resistance (R_DS(on)) of just 0.22 ohm, which translates to reduced conduction losses and improved overall efficiency.
• High Current Rating: With a continuous drain current (I_D) of 16 A, this MOSFET can handle significant power, making it suitable for applications with high current demands.
• Reduced Gate Charge: The STB16NM50N features a low gate charge (Q_g), which minimizes the power required to drive the MOSFET, thereby reducing switching losses and enabling faster switching speeds.
• 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring it can withstand tough conditions without failure.

Applications

The STB16NM50N is versatile and can be utilized in various applications that demand high-efficiency and power density. Its main applications include:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• High-efficiency DC-DC converters
• Electronic lamp ballasts
• LED lighting solutions

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STB16NM50N is no exception and is manufactured to ensure performance consistency and longevity, making it a reliable choice for professional and industrial applications.