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SCTWA60N120G2-4

Part No SCTWA60N120G2-4
Manufacturer STMicroelectronics
Catalog FETs - Single
Description SILICON CARBIDE POWER MOSFET 120
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202301-SCTWA60N120G2-4
Manufacturer STMicroelectronics
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Ultra Librarian 3D Model Ultra Librarian SCTWA60N120G2-4 CAD Model

Description

STMicroelectronics SCTWA60N120G2-4 Silicon Carbide Power MOSFET

The SCTWA60N120G2-4 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This high-performance power MOSFET is designed to meet the efficiency and reliability demands of modern high-power switching applications. With its advanced material properties, the SCTWA60N120G2-4 offers superior performance compared to traditional silicon-based MOSFETs.

Featuring a robust and reliable construction, the SCTWA60N120G2-4 boasts a wide bandgap, which enables operation at higher temperatures, voltages, and frequencies. This makes it an ideal choice for applications such as electric vehicles, solar inverters, switch-mode power supplies, and other energy-efficient power conversion systems.

The SCTWA60N120G2-4 is characterized by its low on-resistance (R<sub>DS(on)) and reduced switching losses. These features contribute to its exceptional efficiency, helping to minimize energy waste and heat generation. The device's high current handling capability and fast switching speeds are instrumental in improving the performance and compactness of power electronic systems.

Key Specifications:

  • Drain-source voltage (V<sub>DS): 1200 V
  • Continuous drain current (I<sub>D): 60 A
  • Low on-resistance (R<sub>DS(on)): Minimized for high-efficiency operation
  • Gate charge (Q<sub>g): Optimized for fast switching
  • Max junction temperature (T<sub>j): High for robust performance

The SCTWA60N120G2-4 also prioritizes user safety and device longevity with its built-in protection features. It includes an integrated body diode, which provides inherent diode recovery and reverse conduction protection, enhancing the reliability of the overall system.

STMicroelectronics has engineered the SCTWA60N120G2-4 to be compatible with standard gate driving voltages, making it easy to integrate into existing designs without the need for extensive modifications. Its TO-247-4L package ensures efficient thermal management and simplifies the mounting process.

By choosing the SCTWA60N120G2-4 for your power conversion needs, you are opting for a MOSFET that delivers top-tier performance, energy efficiency, and reliability, backed by STMicroelectronics' commitment to innovation and quality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $38.8823 $77.7646
4+ $31.9034 $127.6136
5+ $30.9064 $154.5320
7+ $29.9094 $209.3658
9+ $28.9125 $260.2125
12+ $25.9215 $311.0580
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Availability: 542 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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