EN
  • EN
  • DE

SCTWA60N120G2-4

Part No SCTWA60N120G2-4
Manufacturer STMicroelectronics
Catalog FETs - Single
Description SILICON CARBIDE POWER MOSFET 120
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Win Source Part Number WS1202301-SCTWA60N120G2-4
Manufacturer STMicroelectronics
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Ultra Librarian 3D Model Ultra Librarian SCTWA60N120G2-4 CAD Model

Description

STMicroelectronics SCTWA60N120G2-4 Silicon Carbide Power MOSFET

The SCTWA60N120G2-4 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This high-performance power MOSFET is designed to meet the efficiency and reliability demands of modern high-power switching applications. With its advanced material properties, the SCTWA60N120G2-4 offers superior performance compared to traditional silicon-based MOSFETs.

Featuring a robust and reliable construction, the SCTWA60N120G2-4 boasts a wide bandgap, which enables operation at higher temperatures, voltages, and frequencies. This makes it an ideal choice for applications such as electric vehicles, solar inverters, switch-mode power supplies, and other energy-efficient power conversion systems.

The SCTWA60N120G2-4 is characterized by its low on-resistance (RDS(on)) and reduced switching losses. These features contribute to its exceptional efficiency, helping to minimize energy waste and heat generation. The device's high current handling capability and fast switching speeds are instrumental in improving the performance and compactness of power electronic systems.

Key Specifications:

  • Drain-source voltage (VDS): 1200 V
  • Continuous drain current (ID): 60 A
  • Low on-resistance (RDS(on)): Minimized for high-efficiency operation
  • Gate charge (Qg): Optimized for fast switching
  • Max junction temperature (Tj): High for robust performance

The SCTWA60N120G2-4 also prioritizes user safety and device longevity with its built-in protection features. It includes an integrated body diode, which provides inherent diode recovery and reverse conduction protection, enhancing the reliability of the overall system.

STMicroelectronics has engineered the SCTWA60N120G2-4 to be compatible with standard gate driving voltages, making it easy to integrate into existing designs without the need for extensive modifications. Its TO-247-4L package ensures efficient thermal management and simplifies the mounting process.

By choosing the SCTWA60N120G2-4 for your power conversion needs, you are opting for a MOSFET that delivers top-tier performance, energy efficiency, and reliability, backed by STMicroelectronics' commitment to innovation and quality.

You May Also Be Interested in

Infineon Technologies
MOSFET N-CH 650V 2.8A TO252-3
Lowest to $1.0909
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT323 T&R
Need more? Email Us
Littelfuse Inc.
MOSFET N-CH 250V 80A TO3P
Lowest to $27.2727
Infineon Technologies
MOSFET N-CH 30V 19A DIRECTFET
Need more? Email Us
EPC
GANFET N-CH 100V 6A DIE OUTLINE
Lowest to $2.1546
Rohm Semiconductor
MOSFET N-CH 45V 3A TSMT3
Lowest to $0.1363
IXYS
MOSFET N-CH 300V 94A TO3P
Need more? Email Us
Diodes Incorporated
MOSFET P-CH 12V 3.8A SOT363
Lowest to $0.1909
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DSO
Lowest to $2.4545

Top Sellers

FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.2767
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
Bosch Sensortec
ACCELEROMETER 16LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $9.5038
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $32.0752
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $4.7519
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $9.9790
Texas Instruments
DC DC CONVERTER 1-16V / Non-Isolated PoL Module DC DC Converter 1 Output 1 ~ 16V 6A 3V - 36V Input
Lowest to $13.0101
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.3800
Solomon
LCD Display Controller 128-Pin LQFP Tray
Lowest to $4.1579
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $2.3760
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0713
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Lowest to $18.8657

Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $38.8823 $77.7646
4+ $31.9034 $127.6136
5+ $30.9064 $154.5320
7+ $29.9094 $209.3658
9+ $28.9125 $260.2125
12+ $25.9215 $311.0580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Estimate Shipping
Enter your destination to get a shipping estimate
*
Availability: 542 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
Expected Shipping Date
Ship today if order in (HKT)
Supplier Lead-Time Call for availability
Estimate shipping fee
Enter your destination to get a shipping estimate
Estimate Shipping Fee

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess