Overview of Product M93C66-WMN6TP from STMicroelectronics
The M93C66-WMN6TP is a 4 Kbit (512 x 8 or 256 x 16) serial EEPROM (Electrically Erasable Programmable Read-Only Memory) that is part of STMicroelectronics' M93Cxx family. This device offers an array of features that make it an excellent choice for a broad range of applications where reliable and efficient non-volatile memory storage is essential.
Key Features
- Memory Size: The device provides a memory capacity of 4 Kbits, which can be organized as either 512 bytes (8 bits each) or 256 words (16 bits each), selectable through an external instruction.
- Serial Interface: It employs a Microwire serial interface which supports up to 10 MHz clock frequency, enabling fast data transfer rates.
- Operating Voltage Range: The M93C66-WMN6TP operates within a voltage range of 2.5V to 5.5V, allowing for flexible integration into various circuit designs.
- Write Cycle Time: It offers a write cycle time of 5 ms (typical), with the capability to write data in byte or word format for added convenience.
- Endurance: The EEPROM is designed for high reliability, with an endurance of 1 million write cycles and a data retention period of 40 years.
- Package: Supplied in an 8-pin SOIC package, the M93C66-WMN6TP is suitable for surface mount technology, optimizing board space.
Applications
The versatility of the M93C66-WMN6TP makes it ideal for a wide array of applications, including:
- Automotive systems
- Industrial control systems
- Consumer electronics
- Telecommunication devices
- Medical devices
- Smart cards
Product Summary
The STMicroelectronics M93C66-WMN6TP is a robust and reliable serial EEPROM, offering a mix of density, speed, and endurance. Its compatibility with a wide voltage range and serial interface standards, combined with its small form factor, makes it an excellent choice for designers looking to incorporate non-volatile memory into their systems. Whether used in automotive environments or delicate medical instruments, this EEPROM provides the performance and durability needed for critical data storage applications.
