STMicroelectronics M27C256B-20F1 EPROM

The M27C256B-20F1 is a high-speed 256 Kbit EPROM (Erasable Programmable Read-Only Memory) manufactured by STMicroelectronics. This memory chip is designed to offer a flexible and reliable storage solution for a wide array of applications, including embedded systems, automotive industries, and various electronics requiring firmware or data storage that can be updated.

Key Features

• Memory Capacity: The device boasts a substantial 256 Kbit storage capacity, allowing ample space for code or data that needs to be retained without power.
• Access Time: With an access time of 200 ns (nanoseconds), the M27C256B-20F1 offers swift read operations, making it suitable for high-performance systems where speed is crucial.
• Programming Voltage: The standard programming voltage of 12.5V enables reliable writing to the EPROM, ensuring data integrity and stability.
• Package: Encased in a 28-pin Ceramic DIP (Dual In-line Package), the M27C256B-20F1 is designed for durability and easy integration into various circuit board layouts.
• Erase Cycle: The chip can be electrically erased and reprogrammed, providing flexibility for updates and changes to the stored data. UV light can erase the data, allowing for reuse and reprogramming.
• Temperature Range: It operates within a temperature range of -40°C to +125°C, ensuring reliability and performance under extreme conditions.

Applications

The versatility of the M27C256B-20F1 EPROM makes it an ideal choice for applications that require data or code to be updated periodically, such as:

• Embedded systems and microcontroller-based applications
• Automotive electronics and engine control units
• Industrial control systems
• Telecommunication infrastructure
• Consumer electronics

STMicroelectronics' commitment to quality ensures that the M27C256B-20F1 EPROM meets the high standards required for professional electronics design and deployment. With its robust feature set and flexible applications, this EPROM is a reliable choice for designers and engineers looking to incorporate non-volatile memory into their systems.