The SVD7N80F is a high-voltage power MOSFET from Silan Semiconductor, designed for high-efficiency switching applications. This device utilizes advanced trench technology to achieve excellent on-state resistance and low gate charge, contributing to reduced power losses and improved overall system performance. It is available in a TO-220F package, offering good thermal performance.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• Electronic Ballasts for lighting
• DC-DC Converters

Features:

• High voltage capability: 800V
• Low on-state resistance: Rds(on) = typically 1.2 Ohms @ Vgs = 10V
• Fast switching speed
• Low gate charge: Qg = typically 12nC
• Avalanche energy rated
• Isolated TO-220F package

Benefits:

• Improved energy efficiency due to low on-state resistance
• Reduced power losses and heat generation
• Simplified thermal management
• Increased system reliability
• Suitable for high-frequency switching applications
• Cost-effective solution for power switching

Additional Details:

The SVD7N80F incorporates an avalanche ruggedness rating, meaning it can withstand a certain amount of energy dissipation during avalanche breakdown. This feature enhances its robustness in demanding applications. The isolated TO-220F package provides ease of mounting and good electrical isolation between the device and the heatsink. It is designed to operate over a wide temperature range, typically from -55°C to +150°C.

Technical Specifications:

• Drain-Source Voltage (Vds): 800V
• Gate-Source Voltage (Vgs): ±30V
• Continuous Drain Current (Id): 7A
• Pulsed Drain Current (Idm): 21A
• Single Pulse Avalanche Energy (Eas): 120mJ
• Operating Junction Temperature: -55°C to +150°C