The SVD7N80F is a high-voltage power MOSFET from Silan Semiconductor, designed for high-efficiency switching applications. This device utilizes advanced trench technology to achieve excellent on-state resistance and low gate charge, contributing to reduced power losses and improved overall system performance. It is available in a TO-220F package, offering good thermal performance.
Applications:
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Uninterruptible Power Supplies (UPS)
- Electronic Ballasts for lighting
- DC-DC Converters
Features:
- High voltage capability: 800V
- Low on-state resistance: Rds(on) = typically 1.2 Ohms @ Vgs = 10V
- Fast switching speed
- Low gate charge: Qg = typically 12nC
- Avalanche energy rated
- Isolated TO-220F package
Benefits:
- Improved energy efficiency due to low on-state resistance
- Reduced power losses and heat generation
- Simplified thermal management
- Increased system reliability
- Suitable for high-frequency switching applications
- Cost-effective solution for power switching
Additional Details:
The SVD7N80F incorporates an avalanche ruggedness rating, meaning it can withstand a certain amount of energy dissipation during avalanche breakdown. This feature enhances its robustness in demanding applications. The isolated TO-220F package provides ease of mounting and good electrical isolation between the device and the heatsink. It is designed to operate over a wide temperature range, typically from -55°C to +150°C.
Technical Specifications:
- Drain-Source Voltage (Vds): 800V
- Gate-Source Voltage (Vgs): ±30V
- Continuous Drain Current (Id): 7A
- Pulsed Drain Current (Idm): 21A
- Single Pulse Avalanche Energy (Eas): 120mJ
- Operating Junction Temperature: -55°C to +150°C
