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2SD478

Part No 2SD478
Manufacturer Savantic, Inc.
Catalog Hard To Find
Description Silicon NPN Power Transistors
Sample
Rohs State rohs
ECAD Module
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Manufacturer Savantic, Inc.
Win Source Part Number 1126591-2SD478
Manufacturer Homepage www.svntc.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD478 CAD Model

Description

The 2SD478 is an NPN epitaxial silicon transistor designed for use in high-voltage switching and amplifier applications. Known for its robust construction and reliable performance, it's commonly used in power supplies, motor control circuits, and various other electronic devices.

Applications

  • Power Supplies: Switching regulators and DC-DC converters.
  • Motor Control: Driving small to medium-sized DC motors.
  • Inverters: Low to medium power inverters for various applications.
  • Lighting: Electronic ballasts for fluorescent lamps.
  • Amplifiers: Audio and general-purpose amplification.

Features

  • High Voltage Capability: VCEO = 400V, suitable for high voltage circuits.
  • High Current Capability: IC = 1A continuous collector current.
  • Low Saturation Voltage: Reduces power dissipation and improves efficiency.
  • Fast Switching Speed: Allows for efficient operation in switching applications.
  • Epitaxial Silicon Structure: Provides improved performance and reliability.
  • NPN Transistor: Standard NPN configuration for easy integration into circuits.

Benefits

  • Reliable Performance: Robust design ensures consistent operation in demanding applications.
  • High Efficiency: Low saturation voltage minimizes power losses.
  • Versatile Application: Suitable for a wide range of switching and amplification tasks.
  • Easy Integration: Standard NPN configuration simplifies circuit design.
  • Compact Size: Allows for use in space-constrained applications.

Additional Details

The 2SD478 typically comes in a TO-126 or similar through-hole package. Its key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 400V, a collector current (IC) of 1A, and a power dissipation (PC) of around 10W, depending on the package and operating conditions. The transistor has a typical current gain (hFE) of 50-200. It is designed to operate within a temperature range of -55°C to +150°C. It is crucial to use appropriate heatsinking when operating the transistor at higher power levels to prevent overheating and ensure its longevity.

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