The K4T51163QG-HCE70 is a 512Mb DDR2 SDRAM (Double Data Rate Two Synchronous Dynamic Random Access Memory) device manufactured by Samsung. This memory module offers high-speed data transfer and is designed for various applications requiring high memory bandwidth.

Applications:

• Graphics cards
• Game consoles
• Desktop and Laptop Computers
• Networking devices
• Video processing equipment

Features:

• 512Mb Capacity
• DDR2 SDRAM Technology
• Data Rate up to 800Mbps
• Operating Voltage: 1.8V
• Double data rate architecture; two data transfers per clock cycle
• On-chip DLL aligns DQ and CK transition
• Four internal banks for concurrent operation
• Precharge and auto refresh capabilities
• Posted CAS

Benefits:

• Increased memory bandwidth compared to DDR, improving system performance.
• Lower operating voltage reduces power consumption and heat generation.
• Larger capacity enables efficient handling of large datasets and complex programs.
• Improved signal integrity due to on-chip termination.
• Reliable operation due to robust design and manufacturing.

Additional Details:

The K4T51163QG-HCE70 is available in a FBGA (Fine-pitch Ball Grid Array) package. It is compliant with JEDEC standards for DDR2 SDRAM. Consult the official Samsung datasheet for precise timing characteristics, power consumption details, and package information.