The Samsung H5TQ2G63DFR is a high-performance Double Data Rate 3 (DDR3) SDRAM. This memory component is designed to provide high bandwidth and low latency for demanding applications.

Applications

• High-performance computing
• Graphics cards
• Gaming consoles
• Networking equipment
• Embedded systems requiring high memory bandwidth

Features

• DDR3 technology for high-speed data transfer
• 2Gb (256M x 8) memory organization
• Operating voltage of 1.5V
• Data transfer rates up to 1600 Mbps
• 8 internal banks
• Double data rate architecture; two data transfers per clock cycle
• On-die termination (ODT) for improved signal integrity
• Lead-free construction

Benefits

• Increased system performance due to high memory bandwidth
• Reduced power consumption compared to previous generation DDR2 SDRAM
• Improved signal integrity for reliable operation
• Enhanced gaming and graphics performance
• Suitable for a wide range of applications due to its versatility and performance

Technical Specifications

The H5TQ2G63DFR features a 2Gb capacity organized as 256M x 8. It operates at a voltage of 1.5V and supports data transfer rates up to 1600 Mbps. The component includes 8 internal banks, allowing for concurrent memory operations. The on-die termination (ODT) feature minimizes signal reflections and improves signal integrity, enabling reliable operation at high speeds. The operating temperature range and specific timings are typically outlined in the official Samsung datasheet for this part.