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SCT2080KEC

Part No SCT2080KEC
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 1200V 40A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Maximum) at Id, Vgs 117mOhm at 10A, 18V
Vgs(th) (Maximum) at Id 4V at 4.4mA
Gate Charge (Qg) (Maximum) at Vgs 106nC at 18V
Maximum Vgs +22V, -6V
Input Capacitance (Ciss) (Maximum) at Vds 2080pF at 800V
Power Dissipation (Maximum) 262W (Tc)
Temperature Range - Operating 175°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 360
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810456-SCT2080KEC
Ultra Librarian 3D Model Ultra Librarian SCT2080KEC CAD Model

Description

This N-channel FET is a high-quality electronic component that is designed for use in a wide range of applications. It has a TO-247-3 supplier device package and a drive voltage of 18V.

  • FET Type: N-Channel
  • Supplier Device Package: TO-247-3
  • Drive Voltage: 18V
  • Drain to Source Voltage (Vdss): 1200V
  • Power Dissipation (Maximum): 262W (Tc)
  • Current Rating: 40A (Tc) @ 25°C
  • Temperature Range: 175°C
  • Manufacturer Pack Quantity: 360
  • MSL Level: 1 (unlimited)
  • Manufacturer: Rohm Semiconductor
  • Win Source Part Number: 810456-SCT2080KEC

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $52.7356 $52.7356
3+ $43.2702 $129.8106
4+ $41.9180 $167.6720
5+ $40.5658 $202.8290
7+ $39.2136 $274.4952
9+ $35.1571 $316.4139
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,403 pieces
Order Increment : 1 pcs
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