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RP1L055SNTR

Part No RP1L055SNTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 5.5A MPT6 / N-Channel 60 V 5.5A (Ta) 2W (Ta) Surface Mount MPT6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 49mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package MPT6
Package / Case 6-SMD, Flat Leads
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names RP1L055SNTRCT,RP1L055SNDKR,RP1L055SNCT,RP1L055SNTRCT-ND,RP1L055SNTRDKR-ND,RP1L055SNTRDKR
Standard Package 1,000
Win Source Part Number 1088883-RP1L055SNTR
Ultra Librarian 3D Model Ultra Librarian RP1L055SNTR CAD Model

Description

The Rohm Semiconductor RP1L055SNTR is a MOSFET (Metal Oxide) transistor that is N-channel. It has a drain to source voltage (Vdss) of 60V and a current rating of 5.5A (Ta) @ 25°C.

  • Rds On (Max) @ Id, Vgs: 49mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Power Dissipation (max): 2W (Ta)
  • Mounting: SMD (SMT) technology
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
  • Temperature Range for Operating: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6369 $60.5055
225+ $0.5227 $117.6075
345+ $0.5063 $174.6735
475+ $0.4900 $232.7500
610+ $0.4737 $288.9570
820+ $0.4246 $348.1720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,660 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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