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RMW200N03FU7TB

Part No RMW200N03FU7TB
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 183525-RMW200N03FU7TB
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RMW200N03FU7TB CAD Model

Description

The RMW200N03FU7TB is a 30V, N-channel power MOSFET from Rohm Semiconductor, designed for efficient power switching applications. It leverages Rohm's advanced trench gate technology to minimize on-resistance and gate charge, resulting in enhanced power conversion efficiency and reduced switching losses. The device is housed in a compact, surface-mount package that offers excellent thermal performance for space-constrained applications.

Applications:

  • DC-DC converters
  • Load switching
  • Power management in portable devices
  • Motor control

Features:

  • Low On-Resistance: Minimizes conduction losses for higher efficiency.
  • Low Gate Charge: Reduces switching losses at high frequencies.
  • Trench Gate Structure: Provides superior switching performance.
  • Compact Package: Allows for high-density board mounting.
  • 30V Drain-Source Voltage: Suitable for a variety of low-voltage applications.

Benefits:

  • Improved Efficiency: Lower on-resistance and gate charge lead to higher overall system efficiency.
  • Reduced Heat Generation: Lower losses translate to less heat, improving reliability and thermal management.
  • Faster Switching Speeds: Enhanced switching performance allows for higher frequency operation.
  • Compact Design: Small package size enables use in space-critical applications.
  • Enhanced Reliability: Robust design ensures stable performance under varying operating conditions.

Additional Details:

The RMW200N03FU7TB features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) that varies depending on the application and thermal conditions. The on-resistance (Rds(on)) is exceptionally low, which is crucial for its high efficiency. The gate-source threshold voltage (Vgs(th)) is designed for easy gate driving, and the total gate charge (Qg) is minimized to reduce switching losses. The device's power dissipation depends on the thermal characteristics of the application. It uses a surface-mount package, optimized for thermal performance. This MOSFET is suitable for synchronous rectification, load switching, and other power management functions in battery-powered devices, power adapters, and various industrial applications. Refer to the datasheet for precise electrical characteristics, thermal resistance, and package dimensions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7452 $61.0820
85+ $1.4322 $121.7370
125+ $1.3872 $173.4000
175+ $1.3421 $234.8675
225+ $1.2982 $292.0950
300+ $1.1631 $348.9300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,300 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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