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Same model may have multiple batches, images only for reference.
RGT8BM65DTL Real Image
Same model may have multiple batches, images only for reference.

RGT8BM65DTL

Part No RGT8BM65DTL
Manufacturer Rohm Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 8A 62W TO-252 / IGBT Trench Field Stop 650 V 8 A 62 W Surface Mount TO-252
Datasheet
RGT8BM65DTL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer Rohm Semiconductor
Packaging Reel
Product Status Not For New Designs
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 8 A
Current - Collector Pulsed (Icm) 12 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Power - Max 62 W
Input Type Standard
Gate Charge 13.5 nC
Td (on/off) @ 25°C 17ns/69ns
Test Condition 400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr) 40 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Surface Mount
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252
Base Product Number RGT8BM65
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number RGT8BM65DTLCT,RGT8BM65DTLTR,RGT8BM65DTLDKR
Standard Package 2,500
Win Source Part Number 1324936-RGT8BM65DTL
Ultra Librarian 3D Model Ultra Librarian RGT8BM65DTL CAD Model

Description

The Rohm Semiconductor RGT8BM65DTL is a single IGBT transistor that is surface-mounted and has a maximum power of 62W.

  • Voltage-Collector Emitter Breakdown (max): 650V
  • Maximum Collector Current: 8A
  • Collector Pulsed Current: 12A
  • Gate Charge: 13.5nC
  • td (on/off): 17ns/69ns @ 25°C
  • ROHS3 Compliant: true
  • MSL Level: 1 (unlimited)

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105+ $0.4909 $51.5445
250+ $0.4028 $100.7000
385+ $0.3903 $150.2655
530+ $0.3777 $200.1810
685+ $0.3651 $250.0935
920+ $0.3273 $301.1160
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