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R6520KNXC7G

Name: R6520KNXC7G
Brand: Rohm Semiconductor
SKU: 966317
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	R6520KNXC7G
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	650V 20A TO-220FM, HIGH-SPEED SW / N-Channel 650 V 20A (Ta) 68W (Tc) Through Hole TO-220FM
Datasheet	R6520KNXC7G Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Rohm Semiconductor
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1550 pF @ 25 V
Power Dissipation (Max)	68W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FM
Package / Case	TO-220-3 Full Pack
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	846-R6520KNXC7G
Standard Package	50
Win Source Part Number	966317-R6520KNXC7G
Ultra Librarian 3D Model	Ultra Librarian R6520KNXC7G CAD Model

Alternative Products

Description

The R6520KNXC7G is a MOSFET (Metal Oxide) transistor manufactured by Rohm Semiconductor. Rohm Semiconductor is the manufacturer.

FET Type: N-channel
Drain to Source Voltage (Vdss): 650V
Power Dissipation: 68W (Tc)
Gate Charge (Qg): 40 nC @ 10V
Package: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
55+	$1.1435	$62.8925
125+	$0.9379	$117.2375
195+	$0.9090	$177.2550
265+	$0.8790	$232.9350
340+	$0.8501	$289.0340
455+	$0.7623	$346.8465

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 9,989 pieces

MOQ: 55 pcs

Order Increment : 1 pcs

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