Applications

• RF power amplifiers
• VHF and UHF transmitters
• High-frequency signal amplification
• Oscillator circuits
• Wireless communication devices

Features

• NPN Epitaxial Planar Transistor
• High power gain
• Low intermodulation distortion
• High collector current capability
• Excellent high-frequency characteristics

Benefits

• Provides high-efficiency amplification in RF power amplifier stages.
• Ensures signal integrity by minimizing distortion.
• Supports high-power transmission due to its robust design.
• Allows for stable and reliable operation in high-frequency circuits.
• Improved RF signal transmission and stability

Technical Specifications (Typical)

While specific values may vary, the 2SC5868 typically features:

• Collector-Base Voltage (VCBO): 30 V
• Collector-Emitter Voltage (VCEO): 15 V
• Emitter-Base Voltage (VEBO): 3 V
• Collector Current (IC): 1 A
• Power Dissipation (PC): 5 W
• Transition Frequency (fT): 3 GHz

The 2SC5868 is a reliable choice for applications requiring high-frequency power amplification, such as in wireless communication systems and RF transmitters, providing stable and efficient performance.