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UPA1759G-E1-AT

Name: UPA1759G-E1-AT
Brand: Renesas Electronics America
SKU: 389168
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	UPA1759G-E1-AT
Manufacturer	Renesas Electronics America
Catalog	FETs - Arrays
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Renesas Electronics America
Package	Bulk
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	5A
Rds On (Max) @ Id, Vgs	150mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 10V
Power - Max	2W
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package	8-PSOP
Base Product Number	UPA1759
Standard Package	2,500 pcs
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	389168-UPA1759G-E1-AT
Ultra Librarian 3D Model	Ultra Librarian UPA1759G-E1-AT CAD Model

Alternative Products

Description

The UPA1759G-E1-AT is a MOSFET transistor array designed for FET and MOSFET applications. It is a part of Renesas Electronics America's product lineup. This transistor array features a logic level gate and has a drain to source voltage rating of 60V. With a continuous drain current rating of 5A, the UPA1759G-E1-AT offers reliable performance for various applications. It comes in a bulk package and has a standard package size of 2,500 pieces. The 8-SOIC package ensures easy surface mount installation. With a gate charge of 8nC, this transistor array offers efficient switching characteristics.

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