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HAT2218R-EL-E

Part No HAT2218R-EL-E
Manufacturer Renesas Electronics America
Catalog FETs - Arrays
Description POWER, 7.5A, 30V, N-CH MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.5A, 8A
Rds On (Max) @ Id, Vgs 24mOhm @ 3.75A, 10V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V
Power - Max 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number HAT2218
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 141274-HAT2218R-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2218R-EL-E CAD Model

Description

The 141274-HAT2218R-EL-E is a dual N-channel MOSFET array from Renesas Electronics America. It is part of the Transistors - FETs, MOSFETs category and is packaged in an 8-SOIC surface mount package.

  • Gate Type: Logic Level
  • Drive Voltage: 4.5V
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 7.5A
  • On-Resistance: 24mOhm

With its compact size and high performance, this MOSFET array is ideal for use in power management, motor control, and other high current applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0072 $60.4320
140+ $0.8270 $115.7800
220+ $0.8016 $176.3520
300+ $0.7750 $232.5000
390+ $0.7496 $292.3440
520+ $0.6722 $349.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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