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Same model may have multiple batches, images only for reference.
HAT1091C-EL-E
Same model may have multiple batches, images only for reference.

HAT1091C-EL-E

Part No HAT1091C-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description HAT1091C-EL-E - SILICON P CHANNE / P-Channel 20 V 1.5A (Ta) 830mW (Ta) Surface Mount 6-CMFPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas
Package Bulk
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 175mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V
Power Dissipation (Max) 830mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package 6-CMFPAK
Package / Case 6-SMD, Flat Leads
RoHS Status RoHS non-compliant
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-HAT1091C-EL-E
Standard Package 1
Win Source Part Number 972939-HAT1091C-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT1091C-EL-E CAD Model

Description

The HAT1091C-EL-E is a P-Channel MOSFET transistor from Renesas. HAT1091C-EL-E is a P-Channel MOSFET transistor from Renesas.

  • Vdss: 20V
  • Id: 1.5A (Ta) @ 25°C
  • Rds On: 175mOhm @ 800mA, 4.5V (max)
  • Vgs(th): 1.4V @ 1mA (max)
  • Power Dissipation: 830mW (Ta)
  • Qg: 2.6 nC @ 4.5 V
  • Ciss: 200 pF @ 10 V
  • Vgs: ±12V (max)
  • Temperature Range: 150°C
  • Mounting: 6-SMD, Flat Leads
  • RoHS: Non-compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4598 $59.7740
310+ $0.3774 $116.9940
475+ $0.3656 $173.6600
655+ $0.3538 $231.7390
845+ $0.3420 $288.9900
1,130+ $0.3067 $346.5710
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Availability: 4,703 pieces
MOQ: 130 pcs
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