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2SK3353-AZ

Part No 2SK3353-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description 2SK3353 - N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 41A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4650 pF @ 10 V
Power Dissipation (Max) 1.5W (Ta), 95W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 87 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1181264-2SK3353-AZ
Ultra Librarian 3D Model Ultra Librarian 2SK3353-AZ CAD Model

Description

The 1181264-2SK3353-AZ is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for discrete semiconductor applications.

  • Channel Type: N-Channel
  • Application: Discrete Semiconductor
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 82A
  • On-Resistance (Rds On) @ 41A, 10V: 9.5mOhm
  • Manufacturer: Renesas Electronics America
  • Status: Obsolete
  • Package: Bulk
  • Standard Package: 87 pieces
  • ECCN: EAR99
  • Power Dissipation: 95W
  • Temperature Range: 150°C

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